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PROJECT TOPIC:  BASIC MODEL AND PROPERTIES OF SEMICONDUCTORS
Department:  Physics
AMOUNT:  10,000
FORMAT:   MS WORD
PAGES:  75
 
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1.2     Statement of the Problem

          Based on a wide band gap semiconductors ie. zinc oxide, ZnO, that have potential application in spin electronics -spintronics. The host semiconductors such as ZnO, a material with ubiquitous applications in piezoelectric transducers, varistors and as transparent electrodes is fast becoming one of the most studied materials due mostly to the seminal work by Dietl et al. who predicted ferromagnetic ground state of Zn1−xMnxO with x = 5% and hole doping of 3.5x1020 holes per cm3. Sato et al. further postulated that Fe, Co and Ni doped ZnO should have ferromagnetic ground state without any additional further carrier doping, while, corroborating analysis of Dietl et al. Zn1−xMnxO needs hole carriers to stabilize ferromagnetism from originally a spin-glass ground state present when there is no additional carrier doping. Ferromagnetic electrodes are important for spintronics because they serve as reservoirs of spin-polarized electrons from which non-equilibrium spin population is injected in a typically non-magnetic or insulating material. Polarized spins are then transferred within times typically shorter than their characteristic spin relaxation time through aforementioned non-magnetic or insulating material and finally detected at another ferromagnetic or superconducting electrode. ZnO and other (II-VI) as well as (III-V) semiconductors offer a high potential for nanostructure synthesis so an added ferromagnetism would allow for an unprecedented blend of properties with a strong stress on application.

 


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